smd type ic smd type 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK1959 features gatecanbedrivenby1.5v low on resistance r ds(on) =3.2 max.@v gs =1.5v,i d =50ma r ds(on) =0.5 max.@v gs =4.0v,i d =1a absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 16 v gate to source voltage v gss 7 v drain current i d 2.0 a power dissipation p d 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =16v,v gs =0 100 a gate leakage current i gss v gs = 7v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =3v,i d =100 a 0.5 0.8 1.1 v forward transfer admittance y fs v ds =3v,i d =1.0a 1.0 s v gs =1.5v,i d =50ma 0.8 3.2 v gs =2.5v,i d =0.5a 0.36 0.6 v gs =4.0v,i d =1.0a 0.28 0.5 input capacitance c iss 160 pf output capacitance c oss 150 pf reverse transfer capacitance c rss 50 pf turn-on delay time t d(on) 45 ns rise time tr 190 ns turn-off delay time t d(off) 180 ns fall time t f 210 ns v ds =3v,v gs =0,f=1mhz i d =0.5a,v gs(on) =3v,r l =6 ,v dd =3v,r g =10 drain to source on-state resistance r ds(on) smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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